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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2615
DESCRIPTION With TO-247 package High voltage,high speed APPLICATIONS For high voltage,high speed and high power switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION
Absolute maximum ratings(Tc=25ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg

PARAMETER
Collector-base voltage
INC
Collector-emitter voltage
Emitter-base voltage
E SEM ANG H
Open emitter Open base TC=25ae
CONDITIONS
OND IC
TOR UC
VALUE 500 400 7 8 80 150 -55~150
UNIT V V V A W ae ae
Open collector
Collector current (DC) Collector power dissipation Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2615
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.2A; IB=0 IE=10mA; IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=400V; IE=0 VEB=5V; IC=0 IC=4A ; VCE=5V IC=8A ; VCE=5V 15 7 MIN 400 7 1.0 1.5 0.1 0.1 TYP. MAX UNIT V V V V mA mA
SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2

CHA IN
E SEM NG
OND IC
TOR UC
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2615

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions
3


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